We demonstrated doping in 2D monolayer graphene via local electricalstressing. The doping, confirmed by the resistance-voltage transfercharacteristics of the graphene system, is observed to continuously tunablefrom N-type to P-type as the electrical stressing level (voltage) increases.Two major physical mechanisms are proposed to interpret the observed phenomena:modifications of surface chemistry for N-type doping (at low-level stressing)and thermally-activated charge transfer from graphene to SiO2 substrate forP-type doping (at high-level stressing). The formation of P-N junction on 2Dgraphene monolayer is demonstrated with complementary doping based on locallyapplied electrical stressing.
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